Principal Process Engineer - DRAM and Memory Applications

Job description

Step into a career with ASM, where cutting edge technology meets collaborative culture. ​ For over 55 years ASM has been ahead of what’s next, at the forefront of innovation and what’s technologically possible. With more than 4,500 ASMers representing 70 nationalities, our people and our advanced semiconductor devices are playing a crucial role in trends such as 5G, cloud computing, AI, and autonomous driving.  But we’re more than just a tech company. We value diversity, inclusion and sustainability as we strive to make a positive impact on the world.  Our development programs help support your growth, shaping your future and pushing the boundaries of innovation to unleash potential. As a  Principal Process Engineer at ASM, you will leverage semiconductor processing and analytical equipment to research, develop, and optimize advanced thin-film processes enabling next-generation DRAM and memory technologies . Your work will focus on Atomic Layer Deposition (ALD, PEALD), Epitaxy, PECVD, oxidation, annealing, and curing processes used in highly scaled memory structures, including capacitors, word lines, bit lines, storage nodes, and advanced memory integration schemes. You will apply deep technical expertise in memory device fabrication to deliver innovative process solutions that address critical scaling, performance, reliability, and integration challenges. You will design and execute complex experiments, interpret advanced characterization data, and collaborate closely with customers and product teams to accelerate technology development. Technical publications, customer engagement, and the creation of Intellectual Property (IP) are key aspects of this role. Key Responsibilities • Develop and optimize advanced deposition processes for DRAM and emerging memory applications utilizing ALD, PEALD, Epitaxy, and PECVD technologies. • Drive process innovation for memory-critical films, including high-k dielectrics, capacitor materials, metal electrodes, barrier layers, conductors, and emerging memory materials. <li data-leveltext="" data-font="Symbol" data-listid="1" data-list-defn-props="{"335552541":1,"335559685":720,"335559991":360,"469769226":"Symbol","469769242":[8226],"469777803":"left","469777804":"","469777815":"multilevel"}" data-aria-posinset="3" da